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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
BUV10
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 160 160 140 125 7 25 30 6 150 200 -65~200
UNIT V V V...