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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
BUV39
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.
8V (Max.
) @IC= 7.
5A ·High Switching Speed
APPLICATIONS ·Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL VCEV VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage VBE=-1.
5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 160 90 7 25 45 6 9 120 200 -65~200
UNIT V V V A A A A W ℃ ℃...