Transistors
2SC2631
Silicon
NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1123
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir-
0.
7±0.
1
cuited) Cob
0.
7±0.
2 12.
9±0.
5
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge.
ed Collector-emitter voltage (Base open) VCEO
150
2.
3±0.
2
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector cu...