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P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-20V, -7.
6A, RDS(ON) = 22mΩ @VGS = -4.
5V.
RDS(ON) = 32mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8
CEM2187
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-7.
6 -30 2.
0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characte...