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CEM2163

CET
Part Number CEM2163
Manufacturer CET
Description P-Channel MOSFET
Published Oct 1, 2015
Detailed Description CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) =...
Datasheet PDF File CEM2163 PDF File

CEM2163
CEM2163


Overview
CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.
9A, RDS(ON) = 20mΩ @VGS = -4.
5V.
RDS(ON) = 30mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±12 ID -8.
9 IDM -36 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-...



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