Ordering number:ENN1858B
NPN Epitaxial Planar Silicon
Transistor
2SC3792
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Features
· Adoption of FBET process.
· High DC current gain.
· High VEBO (VEBO≥25V).
· High reverse hFE (150 typ).
· Small ON resistance [Ron=1Ω (IB=5mA)]
Package Dimensions
unit:mm 2003B
[2SC3792]
5.
0 4.
0
4.
0
0.
45 0.
5
0.
45 0.
44
0.
6 2.
0 14.
0 5.
0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junct...