Power
Transistors
2SC3795, 2SC3795A
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.
2±0.
2
16.
7±0.
3 7.
5±0.
2 0.
7±0.
1
I Features
10.
0±0.
2
4.
2±0.
2
• High-speed switching
5.
5±0.
2
2.
7±0.
2
• High collector to base voltage VCBO
• Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
/ Collector to base 2SC3795
VCBO
14.
0±0.
5 Solder Dip
(4.
0)
800
V
voltage
2SC3795A
900
e e) Collector to
2SC3795
VCES
800
V
c typ emitter voltage 2SC3795A
900
n d tage.
ued Collector to emitter voltag...