SMD Type
MOS Field Effect
Transistor 2SK3116
TO-263
+0.
1 1.
27-0.
1
MOSFET
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
Low gate charge QG = 26 nC TYP.
(ID = 7.
5 A, VDD = 450 V, VGS = 10 V)
Low on-state resistance RDS(on) = 1.
2 MAX.
(VGS = 10 V, ID = 3.
75 A)
+0.
2 5.
28-0.
2
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
Avalanche capability ratings
2.
54 5.
08
+0.
1 -0.
1
+0.
2 2.
54-0.
2
+0.
2 15.
25-0.
2
Gate voltage rating
30 V
+0.
2 8.
7-0.
2
+0.
2 2.
54-0.
2
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS
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