Datasheet pdf - http://net/ www.
DataSheet.
co.
kr WFP830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.
6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp b...

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