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WFP830

Part Number	WFP830
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Published	Apr 24, 2019
Detailed Description	WFP830 Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ ...
Datasheet	WFP830 PDF File

Overview

WFP830 Silicon N-Channel MOSFET Features ■ 4.
5A,500V,RDS(on)(Max 1.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
G D S TO220 Absolute Maximum Ratings Symbol VDSS ID I...

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