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WFP830B

Winsemi
Part Number WFP830B
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP830B Silicon N-Channel MOSFET Features � � � � � 5A...
Datasheet PDF File WFP830B PDF File

WFP830B
WFP830B

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFP830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.
6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv...


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