FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar
Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity.
These devices are well suitable for IH applications
Features
• • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.
5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
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TO-264
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DataSheet.
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TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Volt...