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60N10

Part Number	60N10
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 26, 2016
Detailed Description	isc N-Channel Mosfet Transistor INCHANGE Semiconductor 60N10 ·FEATURES ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Vo...
Datasheet	60N10 PDF File

Overview

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 60N10 ·FEATURES ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 60 A ID(puls) Pulse Drain Current 180 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL...

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