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60N100D

Fairchild Semiconductor
Part Number 60N100D
Manufacturer Fairchild Semiconductor
Description FGL60N100D
Published Apr 26, 2012
Detailed Description FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure ha...
Datasheet PDF File 60N100D PDF File

60N100D
60N100D

Overview
FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity.
These devices are well suitable for IH applications Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.
5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E www.
DataSheet.
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kr E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.
for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 1...


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