T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power
Transistor Applications
• • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics
Product Features
• • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: 10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package
Functional Block Diagram
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General Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides 10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.
25 μm process, which features...