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T1G6001528-Q3

TriQuint Semiconductor
Part Number T1G6001528-Q3
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
Published Jul 1, 2012
Detailed Description T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Milita...
Datasheet PDF File T1G6001528-Q3 PDF File

T1G6001528-Q3
T1G6001528-Q3

Overview
T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www.
DataSheet.
net/ 2 General Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.
25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and RoHS compliant Evaluation Boards are available upon request.
Pin Configuration Pin # 1 2 Flange Symbol Vd/RF OUT Vg/RF IN Source Ordering Information Part No.
T1G6001528-Q3 T1G6001528-Q3 EVB1 Preliminary Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc.
- 1 of 15- ECCN EAR99 EAR99 Description Packaged Transistor 5-6 GHz Eval Board Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd – Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature Recommended Operating Conditions Parameter Vd Idq Id_drive (Under RF Drive) Vg Channel Temperature, Tch Rating +40 V -50 to 0 V 80 V 1.
5 A -25 to 25 mA 26 W 37 dBm 250 oC 260 oC -40 to 150 oC Min Typical 28 50 14...


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