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T1G6001528-Q3

Part Number	T1G6001528-Q3
Manufacturer	TriQuint Semiconductor
Description	18 W GaN RF Power Transistor
Published	Jun 21, 2012
Detailed Description	T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Milita...
Datasheet	T1G6001528-Q3 PDF File

Overview

T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www.
DataSheet.
net/ 2 General Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.
25 μm process, which features...

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