Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
9 V typ.
(at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0529EJ0100 Rev.
1.
00 Sep 02, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E www.
DataSheet.
net/ 1.
Gate 2.
Collector 3.
Emitter 4.
Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage...

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