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RJH60M1DPE

Renesas
Part Number RJH60M1DPE
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s...
Datasheet PDF File RJH60M1DPE PDF File

RJH60M1DPE
RJH60M1DPE

Overview
Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
9 V typ.
(at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0529EJ0100 Rev.
1.
00 Sep 02, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E www.
DataSheet.
net/ 1.
Gate 2.
Collector 3.
Emitter 4.
Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to Emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 16 8 32 8 32 52 2.
4 4.
2 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0529EJ0100 Rev.
1.
00 Sep 02, 2011 Page 1 of 3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJH60M1DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES / IR IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 5 — — — — — — — — — — — — 6 Typ — — — 1.
9 2.
3 275 25 7.
5 12.
0 2.
0 6.
0 30 13 80 80 8 Max 5 ±1 7 2.
4 — — — —...


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