Silicon RF Power MOS FET (Discrete)
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power
Transistor 175MHz,520MHz,2W OUTLINE DRAWING
4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05
RD02MUS1B is a MOS FET type
transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
6.
0+/-0.
15
0.
2+/-0.
05
1
4.
9+/-0.
15 1.
0+/-0.
05
2
3 INDEX MARK (Gate)
(0.
22)
(0.
25)
(0.
25)
FEATURES
High power gain: Pout2W, Gp16dB @Vdd=7.
2V,f=175MHz, 520MHz High Efficiency: 65%typ.
(175MHz) High Efficiency: 65%typ.
(520MHz)
0.
2+/-0.
05
0.
9+/-0.
1
Terminal No.
1.
Drain (output) 2.
Source (GND) 3.
Gate (input) Note ( ):center value UNIT:mm...