UNISONIC TECHNOLOGIES CO.
, LTD UT2321
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
Power MOSFET
The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)55mΩ @VGS=-4.
5V * RDS(ON)80mΩ @VGS=-2.
5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
3.
Drain
www.
DataSheet.
net/
2.
Gate
1.
Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free UT2321L-AE3-R UT2321G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel
MARKING
23...