DatasheetsPDF.com

UT2305A

Unisonic Technologies
Part Number UT2305A
Manufacturer Unisonic Technologies
Description P-Channel MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT2305A P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT2305A is P-channel enhancement...
Datasheet PDF File UT2305A PDF File

UT2305A
UT2305A

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT2305A P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks.
With fast switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
 SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package Pin Assignment 1234567 8 Packing UT2305AG-AE3-R SOT-23 S G D - - - - - Tape Reel UT2305AG-K06B-2020-R DFN-6B(2×2) D D G S D D D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING SOT-23 B3EG www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd DFN-6B(2×2) 1 of 5 QW-R502-192.
E UT2305A  PIN CONFIGURATION (For DFN-6B(2×2)) Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 5 QW-R502-192.
E UT2305A Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS - 30 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (Note 3) (TA=25°C) ID -4.
2 A Pulsed Drain Current (Note 1, 2) IDM Total Power Dissipation (TA=25°C) SOT-23 DFN-6B(2×2) PD -10 A 1.
38 W 1.
48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER Junction to Ambient (Note 3) SOT-23 DFN-6B(2×2) SYMBOL θJA RATING 90 86  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -30 Drain-Source Leakage Current IDSS VDS=-30V, VGS=0V Gate-Source Leakage Current IGSS VGS=±12V, VDS=0V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)