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UT2305

Unisonic Technologies
Part Number UT2305
Manufacturer Unisonic Technologies
Description 20V P-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT2305 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhance...
Datasheet PDF File UT2305 PDF File

UT2305
UT2305

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT2305 4.
2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks.
With fast switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
 SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AL3-R UT2305G-AG3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 SOT-26 Pin Assignment 123456 Packing G S D - - - Tape Reel G S D - - - Tape Reel D D G S D D Tape Reel  MARKING SOT-23 / SOT-23-3 www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd SOT-26 654 23E L: Lead Free G: Halogen Free 123 1 of 4 QW-R502-133.
H UT2305 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS - 20 V Gate-Source Voltage Continuous Drain Current (Note 3) (TA=25°C) VGS ID ± 12 -4.
2 V A Pulsed Drain Current (Note 1, 2) SOT-23-3 IDM -10 A 0.
83 W Power Dissipation (TA=25°C) SOT-23 PD 1.
38 W SOT-26 1.
1 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING SOT-23-3 150 Junction to Ambient (Note 3) SOT-23 θJA 90 SOT-26 110 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W °C/W °C/W  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current BVDSS IDSS VGS=0V, ID=-250μA VDS=-20V, VGS=0V Gat...


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