2N6052
Preferred Device
Darlington Complementary Silicon Power
Transistors
This package is designed for general−purpose amplifier and low frequency switching applications.
Features
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.
0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
Peak
Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Temperature Range
Symbol VCEO VCB VEB
IC
IB PD
TJ, Tstg
...