isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.
)@ IC= 0.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·Complement to Type BD910 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current
5
PC
Collector Power Dissipation @ TC=25℃
90
TJ
Junction Temperature
150
Tstg
Stor...