isc Silicon
NPN Power
Transistor
BDY23
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.
) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
IB
Base Current
PC
Collector Dissipation@TC=25℃
TJ
Junction Temperature
3
A
Power 87.
5
W
200
℃
Tstg
Storage Tempe...