NPN BDY53 – BDY54 SILICON
TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package.
LF Large Signal Power Amplification High Current Fast Switching Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PTOT Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature TJ
Ratings
BDY53 BDY54 BDY53 BDY54
Value
60 120 100 180 7 12 5
Unit
V V V A A W
www.
DataSheet.
net/
@ TC = 25°
60
-65 to +200 TS Storage Temperature
°C
08/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://co.
kr/
NPN BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
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