isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min.
) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
IB
Base Current
5
A
PC
Collector Power Dissipation@TC=25℃
60
W
TJ
Junction Temperature
200
℃
Tstg
St...