BDY55 – BDY56
NPN SILICON
TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
www.
DataSheet.
net/
Value
BDY55 BDY56 BDY55 BDY56 60 120 100 150 7 15 7 117 200 -65 to +200
Unit
V V V A A W °C
@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.
5
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
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