2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT
TRANSISTOR
These TMOS Power FETs are designed.
for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .
,interface and line drivers.
,,,.
0 Fast Switching Speed — ton = toff = 5.
0 ns Max
0 LOW an-Resistance
— 1.
5 Ohm Typ — 2N66591MPF6659 2.
0 Ohm Typ — 2N6660/2N6661 — MPF6660/MPF6661
o Low Drive Requirement, VGS(th) = 2.
0 V Max
e Inherent Current Sharing Capability Permits Easy Paralleling of Many Devices
q
CASE79-02
TO-205AD (TO-391
q
Drain Curre@~~J-’
Continu*s (~)w
Puls\@*2F’:*$ ,,:*,::,,”,.
.
.
,.
,,...