DARLINGTON POWER TRANSISTORS
www.DataSheet4U.com 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation...
ON Semiconductor