NPN SILICON PLANAR MEDIUM POWER
TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.
5 Amp * Ptot=1 Watt
2N6716 2N6717 2N6718
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1
E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base B...