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2N6703

Part Number	2N6703
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Jul 6, 2018
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6703 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2N6703 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6703 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.
5V 160 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark...

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