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2N6708

Part Number	2N6708
Manufacturer	CDIL
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Published	Dec 20, 2006
Detailed Description	www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR ...
Datasheet	2N6708 PDF File

Overview

www.
DataSheet4U.
com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25ºC) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range VALUE 60 45 5 1.
5 850 -55 to +150 UNIT V V V A mW ºC ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=10mA, IB=0 Collector Emitter Voltage V Collector Base Voltage IC=100µA, IE=0 CBO VEBO EmitterBase Voltage IE=10µA, IC=0 ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V, IC=0 Emitter Cut off Current hFE IC=50mA,VCE=2V DC Current Gain IC=250mA,VCE=2V IC=500mA,VCE=2V VCE(sat) IC=500mA,IB=50mA Collector Emitter Saturation Voltage IC=1A,IB=100mA fT VCE=10V, IC=50mA...

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