TK4A60DA
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.
7 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 2.
2 S (typ.
) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.
5 14 35 158 3.
5 3.
5
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Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (T...