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K4A60DA

Toshiba
Part Number K4A60DA
Manufacturer Toshiba
Description TK4A60DA
Published Jun 23, 2013
Detailed Description TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications ...
Datasheet PDF File K4A60DA PDF File

K4A60DA
K4A60DA

Overview
TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
7 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 2.
2 S (typ.
) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.
5 14 35 158 3.
5 3.
5 http://www.
DataSheet4U.
net/ Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B 150 −55 to 150 Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.
57 62.
5 Unit Internal Connection 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.
5 mH, RG = 25 Ω, IAR = 3.
5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrosta...


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