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K4A60DB

Toshiba Semiconductor
Part Number K4A60DB
Manufacturer Toshiba Semiconductor
Description TK4A60DB
Published Feb 18, 2016
Detailed Description TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications ...
Datasheet PDF File K4A60DB PDF File

K4A60DB
K4A60DB

Overview
TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.
6Ω(typ.
) • High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Ф3.
2 ± 0.
2 10 ± 0.
3 A Unit: mm 2.
7 ± 0.
2 3.
9 3.
0 15.
0 ± 0.
3 1.
14 ± 0.
15 2.
8 MAX.
13 ± 0.
5 Absolute Maximum Ratings (Ta = 25°C) 0.
69 ± 0.
15 Ф0.
2 M A 2.
6 ± 0.
1 4.
5 ± 0.
2 Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.
7 14.
8 35 173 3.
7 3.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 2.
54 2.
54 123 0.
64 ± 0.
15 1: Gate 2: Drai...


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