TC2211
REV4_20070504
Plastic Packaged Low Noise PHEMT GaAs FETs
FEATURES
• • • • • • • • 1.
5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.
5 dB Typical at 12 GHz 21.
5 dBm Typical Power at 12 GHz 7.
5 dB Typical Linear Power Gain at 12 GHz Lg = 0.
25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested • Low Cost Plastic SOT143 Package
PHOTO ENLARGEMENT
DESCRIPTION The TC2211 is a high performance field effect
transistor housed in a plastic package with TC1201 PHEMT Chip.
Its low noise figure makes this device suitable for use in low noise amplifiers.
All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICA...