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TC2281

Transcom
Part Number TC2281
Manufacturer Transcom
Description Low Noise and High Dynamic Range Packaged GaAs FETs
Published Jul 4, 2013
Detailed Description TC2281 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical No...
Datasheet PDF File TC2281 PDF File

TC2281
TC2281

Overview
TC2281 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ! ! 0.
5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.
5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.
25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip.
It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.
All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth Conditions Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz http://www.
DataSheet4U.
net/ MIN 10 20.
5 11 TYP 0.
5 12 21.
5 12 90 100 -1.
0* MAX 0.
7 UNIT dB dB dBm dB mA mS Volts Volts °C/W Associated Gain at VDS = 4 V, IDS = 25 mA, f Linear Power Gain, f = 12GHz = 12GHz VDS = 6 V, IDS = 40 mA Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.
6mA Drain-Gate Breakdown Voltage at IDGO = 0.
15mA Thermal Resistance 9 12 150 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 25 mA Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 7.
0 V -3.
0 V IDSS 300 µA 21 dBm 400 mW 175 °C - 65 °C to +175 °C Frequency (GHz) 2 4 6 8 10 12 14 16 18 NFopt (dB) 0.
35 0.
38 0.
40 0.
46 0.
52 0.
57 0.
69 0.
82 1.
02 GA (dB) 24.
8 19.
2 16.
0 13.
7 12.
1 11.
1 10.
6 10.
4 10.
3 MAG 0.
83 0.
73 0.
66 0.
60...


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