FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET February 2012 FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.
5 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 7.
5 mΩ at VGS = 10 V, ID = 14.
5 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.
5 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-A...

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