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FDMS86101A

Fairchild Semiconductor
Part Number FDMS86101A
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60...
Datasheet PDF File FDMS86101A PDF File

FDMS86101A
FDMS86101A

Overview
FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 8 mΩ October 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.
5 mΩ at VGS = 6 V, ID = 9.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
„ MSL1 robust package design „ 100% UIL tested „ 100% Rg tested Application „ DC-DC Conversion „ RoHS Compliant Top Pin 1 Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Co...


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