FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16 A, 24 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
„ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Appli...

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