Part Number
|
SW830A |
Manufacturer
|
SAMWIN |
Description
|
N-channel MOSFET |
Published
|
Aug 18, 2013 |
Detailed Description
|
SAMWIN
SW830A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Imp...
|
Datasheet
|
SW830A
|
Overview
SAMWIN
SW830A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.
5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
BVDSS : 500V ID : 5.
5A RDS(ON) : 1.
5ohm
1
2
1 3
2
3
2
1.
Gate 2.
Drain 3.
Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
...
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