DatasheetsPDF.com

SW830

SAMWIN
Part Number SW830
Manufacturer SAMWIN
Description N-Channel MOSFET
Published Aug 17, 2006
Detailed Description www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typic...
Datasheet PDF File SW830 PDF File

SW830
SW830

Overview
www.
DataSheet4U.
com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.
4 ohm : 5.
0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Parameter DataSheet4U.
com Value 500 5.
5 3.
7 (Note 1) 22 ±30 (Note 2) (Note 1) (Note 3) 390 7.
3 3.
5 73 0.
58 -55~+150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ DataShee Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃ ) Drain Current Pulsed Gate to Source Voltage Single...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)