isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high resolution
display, color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current- Peak
16
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4...