isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 25V(Min) ·DC Current Gain-
: hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.
3V(Max)@ IC = 500mA ·High Current-Gain—Bandwidth Product
fT= 65MHz(Min) @ IC= 100mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage,low-power,high-gain audio
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB PC Ti Tstg
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base ...