Preliminary Data Sheet
N0601N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0557EJ0100 Rev.
1.
00 Nov 07, 2011
The N0601N is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.
2 mΩ MAX.
(VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP.
(VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant
Ordering Information
Part No.
N0601N-ZK-E1-AY ∗1 N0601N-ZK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Package TO-263 1.
39 g TYP.
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Absolute Maximum Ratings (TA = 25°C, all terminals are c...