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N0603N

Renesas
Part Number N0603N
Manufacturer Renesas
Description N-CHANNEL MOSFET
Published Sep 9, 2013
Detailed Description Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0...
Datasheet PDF File N0603N PDF File

N0603N
N0603N

Overview
Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.
1.
00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance RDS (on) = 4.
6 mΩ MAX.
(VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP.
(VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No.
N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.
8 g TYP.
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±100 ±400 156 1.
5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 0.
80 83.
3 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2.
Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH R07DS0559EJ0100 Rev.
1.
00 Nov 07, 2011 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ N0603N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: 1.
Pul...


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