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N0600N

Renesas
Part Number N0600N
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Sep 9, 2013
Detailed Description Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600...
Datasheet PDF File N0600N PDF File

N0600N
N0600N

Overview
Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.
1.
00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX.
(VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX.
(VGS = 4.
5 V, ID = 15 A) • Low input capacitance ⎯ Ciss = 1380 pF TYP.
(VDS = 10 V, VGS = 0 V) Ordering Information Part No.
N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/tube Package Isolated TO-220 typ.
2.
2 g Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±30 ±60 20 2.
0 150 −55 to +150 9.
2 12.
5 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 6.
25 62.
5 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2.
Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V R07DS0220EJ0100 Rev.
1.
00 Jan 25, 2011 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ N0600N Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: 1.
Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.
U.
T.
...


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