TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1955
Unit: mm
· Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA
· Large collector current: IC = −400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
-15 -12 -5 -400 -50 100 125 -55~125
Marking
Unit
V V V mA mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.
4 mg (typ.
)
1 2...